Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors
نویسندگان
چکیده
The silicon photomultiplier (SiPM) is a promising semiconductor device for low-level light detection. The recovery time, or the photon-counting rate of the SiPM is essential for high-flux photon detection in such applications as photon counting computer tomography (CT). A SiPM with epitaxial quenching resistors (EQR SiPM) has advantages in fabricating small APD microcells connected in series with lower quenching resistors, therefore, APD cells with a low RC time constant and a short recovery time can be expected. In this report, the recovery time of EQR SiPM has been investigated using both the double light pulse method and the waveform analysis method. The results show that the recovery time of EQR SiPM is strongly dependent on the size of the active area and the number of fired pixels. For a 3 × 3 mm2 device, while total about 90,000 pixels were fired, the recovery time was 31.1 ± 1.8 ns; while fired pixels were controlled to about 2000, the recovery time decreased significantly to 6.5 ± 0.4 ns; and the recovery time of one fired pixel was 3.1 ± 0.2 ns. For 1.4 × 1.4 mm2 device, the recovery time was 15.2 ± 0.5 ns, while a total of about 20,000 pixels were fired. Effects that may affect the recovery time of the SiPM, including strength of the pulse light, signal transmission time delay, and the readout electronics are discussed.
منابع مشابه
The Digital Silicon Photomultiplier – Principle of Operation and Intrinsic Detector Performance
We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bi...
متن کاملPerformance of Silicon Photomultipliers in photon number and time resolution
Silicon Photomultipliers (SiPMs) are a novel generation of photon detectors designed as an array of independently operated Geiger-mode APDs (pixels) with common output. SiPM provides proportional detection of low-level light pulses starting from single photons with remarkable photon number and time resolution at room temperature. Now they are worldwide recognized to be competitive with vacuum p...
متن کاملUltraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations
In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...
متن کاملSemiconductor optical single-photon detectors
Avalanche Photodiodes (APDs) connected with quenching circuits can be used for single photon detection. This semiconductor photon detector has a better performance than photomultiplier. The principles and applications of APDs are presented. Features, performance of different commercial devices are introduced and compared. Recent research progress based on the improvement of quenching circuits a...
متن کاملSilicon photomultiplier arrays – a novel photon detector for a high resolution tracker produced at FBK - irst , Italy
A silicon photomultiplier (SiPM) array has been developed at FBK-irst [1] having 32 channels and a dimension of 8.0× 1.1 mm. Each 250 μm wide channel is subdivided into 5×22 rectangularly arranged pixels. These sensors are developed to read out a modular high resolution scintillating fiber tracker. Key properties like breakdown voltage, gain and photon detection efficiency (PDE) are found to be...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017